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| GaAs Infrared Emitting Diodes TO-46 Flat Window Package -- 940 nm VTE1013 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -55C to 125C 200 mW 2.11 mW/C 100 mA 1.05 mA/C 3.0 A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max. 5.0V 10 A 940 nm 35 pF 260C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also GaAlAs curves, pages 123-124) Output Irradiance Part Number Ee mW/cm2 Min. VTE1013 2.1 Typ. 2.7 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 27 Total Power PO mW Typ. 30 Test Current IFT mA (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 1.9 Max. 2.5 35 Half Power Beam Angle 1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 126 |
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